Silicon nanowires (SiNWs) were synthesized on Si (111) surfaces using the vapor–liquid–solid technique at high temperature ranging from 1100 0C to 1200 0C. Si:C mixture powders were used as the material sources. Scanning electron microscope images were revealed that the Si nanowires had few tens nanometer of diameter. The Si-core/SiOx-shell structure of the nanowires was investigated via transmission electron microscopy. The photoluminescence of the nanowires at room temperature demonstrated a quantum confinement effect because of the reduced diameter of the nanowires.
