Influence of Annealing Condition on the Structural and Photovoltaic Properties of Cu(In,Ga)(S,Se)2 Solar Cells

Authors: Nguyễn Duy Cường*


Cu(In,Ga)S2 (CIGS) nanoparticles were synthesized at 250 C in oleylamine solvent by hot-injection method. Cu(In,Ga(S,Se)2 films were fabricated by printing CIGS nanoparticles on molybdenum substrates, then annealed at different temperatures in the range of 500-560 C under Se vapor ambience. After annealing, the crystallization of the films was significantly improved, the big size CIGSSe crystallites were formed. Only single phase of CIGSSe existed in the films. The devices annealed at 540 C shows the best cell parameters. The parameters of the best CIGSSe cell achieved are short-circuit current density (JSC) of 27 mA/cm2, open-voltage (VOC) of 0.42 V, fill factor (FF) of 0.36, and conversion efficiency () of 4.23%.


CIGSSe, solar cells, and annealing temperature
Pages : 63-67

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