TThe properties of aluminum oxide (Al2O3) films have shown excellent performances such as remarkable passivation behaviors on both n- and p-type Si sufaces. For fabricating of Al2O3 one can use a cost saving deposition technique using atomic layer deposition (ALD). This study explores the conditions necessary for low temperature Al2O3 thin film by the ALD technique. Characteritstics of Al2O3 thin films was anlysised by variable-angle spectroscopic ellipsometer (VASE) and X-ray photoemission spectroscopy(XPS). Thickness of film was investigated depending on deposition cycles. The estimated deposition growth rates were 1.0 Å/cycle at deposition temperature of about 200oC. An Al2O3 ultra-thin film can be used as a passivation layer for Si thin film solar cells.
ALD, ultra thin film Al2O3, interface pasivation, Si solar cells.
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TẠP CHÍ KHOA HỌC VÀ CÔNG NGHỆ Giấy phép số37/GP-BTTTT (15/01/2021) Giấy phép sửa đổi, bổ sung số140/GP-BTTTT (05/3/2021) Đơn vị cấp phép:Bộ Thông tin và Truyền thông Cơ quan chủ quản:Trường Đại học Bách Khoa Hà Nội Phó tổng biên tập phụ trách:GS. Đinh Văn Phong